High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer
نویسندگان
چکیده
p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer J. J. Gu, Y. Q. Liu, M. Xu, G. K. Celler, R. G. Gordon, and P. D. Ye School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA Soitec USA, Peabody, Massachusetts 01960, USA
منابع مشابه
Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.
Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices. In this paper, we use photoelectron spectroscopy to probe the formation of a GeO2 interface layer between an atomic layer deposited Al2O3 gate dielectric and a Ge(100) substrate during forming gas anneal (FGA). Capacitance- and conduc...
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